20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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Product Information

Terminal Form	THROUGH-HOLE
Power Dissipation Ambient-Max	2.02 W
Avalanche Energy Rating (Eas)	472 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	20 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.1900 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	60 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	600 V
Transistor Application	SWITCHING
Mfr Package Description	TO-220AB, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	SINGLE
Number of Elements	1
Package Style	FLANGE MOUNT

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