2.4 A, 800 V, 6.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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Product Information

Terminal Form	THROUGH-HOLE
Power Dissipation Ambient-Max	2.16 W
Avalanche Energy Rating (Eas)	315 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	2.4 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	6.3 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	9.6 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	800 V
Transistor Application	SWITCHING
Case Connection	ISOLATED
Mfr Package Description	TO-220F, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	SINGLE
Number of Elements	1
Package Style	FLANGE MOUNT

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