10 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET

The actual product may differ from image shown

Product Information

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	TO-3PF, 3 PIN
Pulsed Drain Current-Max (IDM)	40 A
Terminal Form	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Package Style	FLANGE MOUNT
Transistor Application	SWITCHING
Drain Current-Max (ID)	10 A
Case Connection	ISOLATED
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	1.1 ohm
Number of Terminals	3
DS Breakdown Voltage-Min	500 V
Number of Elements	1

Offer your acceptable price, and we may make you satisfied.Your Target Price