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Home Semiconductors - ICs Memory 128K X 36 LATE-WRITE SRAM, 3 ns, PBGA119

128K X 36 LATE-WRITE SRAM, 3 ns, PBGA119

128K X 36 LATE-WRITE SRAM, 3 ns, PBGA119

The actual product may differ from image shown

Part No.:: MCM69R736CZP6
Manufacturer:: Freescale Semiconductor
Product Range:: Memory
Datasheet:: MCM69R736CZP6

Product Information

Terminal Finish	NOT SPECIFIED
Terminal Pitch	1.27 mm
Terminal Form	BALL
Operating Temperature-Max	70 Cel
Number of Words Code	128K
Supply Voltage-Nom (Vsup)	3.3 V
Temperature Grade	COMMERCIAL
Package Shape	SQUARE
Status	DISCONTINUED
Operating Temperature-Min	0.0 Cel
Number of Words	131072 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Access Time-Max (tACC)	3 ns
Memory Density	4.72E6 deg
Supply Voltage-Max (Vsup)	3.46 V
Supply Voltage-Min (Vsup)	3.14 V
Organization	128K X 36
Memory Width	36
Surface Mount	Yes
Parallel/Serial	PARALLEL
Mfr Package Description	14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
Operating Mode	SYNCHRONOUS
Number of Terminals	119
Terminal Position	BOTTOM
Technology	BICMOS
Package Style	GRID ARRAY
Memory IC Type	LATE-WRITE SRAM

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