0.46 A, 400 V, 3 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOS

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Product Information

Status	DISCONTINUED
Channel Type	N-CHANNEL AND P-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	DIP-8
Pulsed Drain Current-Max (IDM)	3.68 A
Terminal Form	THROUGH-HOLE
Power Dissipation Ambient-Max	1.6 W
Package Style	IN-LINE
Transistor Application	SWITCHING
Operating Mode	ENHANCEMENT
Drain Current-Max (ID)	0.4600 A
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	DUAL
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	3 ohm
Number of Terminals	8
DS Breakdown Voltage-Min	400 V
Number of Elements	2

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