All

SIGN IN or REGISTER

Your cart is empty

Home Semiconductors - ICs Memory 4M X 16 DDR DRAM, 0.7 ns, PDSO66

4M X 16 DDR DRAM, 0.7 ns, PDSO66

4M X 16 DDR DRAM, 0.7 ns, PDSO66

The actual product may differ from image shown

Part No.:: M13S64164A-5TG
Manufacturer:: ESMT
Product Range:: Memory
Datasheet:: M13S64164A-5TG

Product Information

Terminal Pitch	0.6500 mm
Access Mode	FOUR BANK PAGE BURST
Terminal Form	GULL WING
Operating Temperature-Max	70 Cel
Number of Words Code	4M
Supply Voltage-Nom (Vsup)	2.5 V
Temperature Grade	COMMERCIAL
Package Shape	RECTANGULAR
Status	ACTIVE
Operating Temperature-Min	0.0 Cel
Number of Words	4.19E6 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Memory Density	6.71E7 deg
Supply Voltage-Max (Vsup)	2.7 V
Number of Ports	1
Supply Voltage-Min (Vsup)	2.3 V
Organization	4M X 16
Memory Width	16
Surface Mount	Yes
Mfr Package Description	0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
Operating Mode	SYNCHRONOUS
Number of Terminals	66
Terminal Position	DUAL
Access Time-Max (tRAC)	0.7000 ns
Package Style	SMALL OUTLINE, THIN PROFILE
Memory IC Type	DDR DRAM

Target Price

Offer your acceptable price, and we may make you satisfied.Your Target Price

Technical Support

Technical Support

Customer Reviews

Customer Q&A Exchange