11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

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Product Information

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	ROHS COMPLIANT PACKAGE-3
Pulsed Drain Current-Max (IDM)	30 A
Terminal Form	GULL WING
Operating Mode	ENHANCEMENT
Package Style	SMALL OUTLINE
Drain Current-Max (ID)	11 A
Transistor Application	SWITCHING
Number of Elements	1
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.1200 ohm
Number of Terminals	2
DS Breakdown Voltage-Min	100 V
Surface Mount	Yes

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