20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	ROHS COMPLIANT, SOP-8
Pulsed Drain Current-Max (IDM)	26 A
Terminal Form	GULL WING
Power Dissipation Ambient-Max	2 W
Package Style	SMALL OUTLINE
Transistor Application	SWITCHING
Operating Mode	ENHANCEMENT
Number of Elements	2
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	DUAL
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.0300 ohm
Number of Terminals	8
DS Breakdown Voltage-Min	20 V
Surface Mount	Yes

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