20 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Form	NO LEAD
Power Dissipation Ambient-Max	1.38 W
Package Shape	SQUARE
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.0450 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	20 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	20 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	2 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, DFN-6
Operating Mode	ENHANCEMENT
Number of Terminals	6
Terminal Position	DUAL
Number of Elements	2
Package Style	SMALL OUTLINE

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