Your cart is empty

2.5 A, 100 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, M

Part No.:
AP5521GM-HF
Manufacturer:
APEC
Product Range:
Transistors (BJT)
AP5521GM-HF

Product Information

Terminal FormGULL WING
Power Dissipation Ambient-Max2 W
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)2.5 A
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.1500 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)10 A
Channel TypeN-CHANNEL AND P-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min100 V
Transistor ApplicationSWITCHING
Surface MountYes
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, SOP-8
Operating ModeENHANCEMENT
Number of Terminals8
Terminal PositionDUAL
Number of Elements2
Package StyleSMALL OUTLINE


Call for Availability
Price for:  EachMinimum:  1

Target Price

Offer your acceptable price, and we may make you satisfied.Your Target Price

Technical Support

Technical Support

Customer Reviews

Write Review

Customer Q&A Exchange

Ask A Question