100 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Form	GULL WING
Power Dissipation Ambient-Max	3.13 W
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Configuration	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.1500 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	12 A
Channel Type	N-CHANNEL AND P-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	100 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	HALOGEN FREE AND ROHS COMPLIANT, TO-252, 5 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	4
Terminal Position	SINGLE
Number of Elements	2
Package Style	SMALL OUTLINE

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