15 A, 35 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252

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Product Information

Terminal Form	GULL WING
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	15 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.0750 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	40 A
Channel Type	P-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	35 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	ROHS COMPLIANT PACKAGE-3
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

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