2.4 A, 30 V, 0.13 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MO

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Product Information

Terminal Form	GULL WING
Power Dissipation Ambient-Max	1.14 W
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	2.4 A
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.1300 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	10 A
Channel Type	N-CHANNEL AND P-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	30 V
Transistor Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	ROHS COMPLIANT PACKAGE-6
Operating Mode	ENHANCEMENT
Number of Terminals	6
Terminal Position	DUAL
Number of Elements	2
Package Style	SMALL OUTLINE

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