1200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

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Product Information

Terminal Form	GULL WING
Power Dissipation Ambient-Max	0.6900 W
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	1.2 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.6000 ohm
Transistor Type	GENERAL PURPOSE SMALL SIGNAL
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	20 V
Transistor Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	ROHS COMPLIANT PACKAGE-3
Operating Mode	ENHANCEMENT
Number of Terminals	3
Feedback Cap-Max (Crss)	13 pF
Terminal Position	DUAL
Number of Elements	1
Package Style	SMALL OUTLINE

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