2.7 A, 25 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Form	GULL WING
Power Dissipation Ambient-Max	1.38 W
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	2.7 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.1170 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	10 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	25 V
Transistor Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	DUAL
Number of Elements	1
Package Style	SMALL OUTLINE

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