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12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB

Part No.:
AP18P10GS
Manufacturer:
APEC
Product Range:
Transistors (BJT)
AP18P10GS

Product Information

Terminal FormGULL WING
Avalanche Energy Rating (Eas)40 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)12 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.1600 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)48 A
Channel TypeP-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min100 V
Transistor ApplicationSWITCHING
Surface MountYes
Mfr Package DescriptionROHS COMPLIANT, TO-263, 3 PIN
Operating ModeENHANCEMENT
Number of Terminals2
Terminal PositionSINGLE
Number of Elements1
Package StyleSMALL OUTLINE


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