11 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

The actual product may differ from image shown

Product Information

Terminal Form	THROUGH-HOLE
Avalanche Energy Rating (Eas)	50 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	11 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.6200 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	40 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	500 V
Transistor Application	SWITCHING
Case Connection	ISOLATED
Mfr Package Description	ROHS COMPLIANT, TO-220CFM, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	SINGLE
Number of Elements	1
Package Style	FLANGE MOUNT

Offer your acceptable price, and we may make you satisfied.Your Target Price