2.7 A, 400 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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Product Information

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
Pulsed Drain Current-Max (IDM)	10 A
Terminal Form	THROUGH-HOLE
Power Dissipation Ambient-Max	2 W
Package Style	FLANGE MOUNT
Transistor Application	SWITCHING
Operating Mode	ENHANCEMENT
Drain Current-Max (ID)	2.7 A
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	2.6 ohm
Number of Terminals	3
DS Breakdown Voltage-Min	400 V
Number of Elements	1

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