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Infineon Technologies
Infineon Technologies
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BBY55-03WE6433
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Infineon Technologies
18.6 pF, 16 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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IPB036N12N3G
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Infineon Technologies
180 A, 120 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
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D1800N36T
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Infineon Technologies
1800 A, 3600 V, SILICON, RECTIFIER DIODE
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D1800N40T
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Infineon Technologies
1800 A, 4000 V, SILICON, RECTIFIER DIODE
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D1800N42T
10
Infineon Technologies
1800 A, 4200 V, SILICON, RECTIFIER DIODE
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D1800N44T
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Infineon Technologies
1800 A, 4400 V, SILICON, RECTIFIER DIODE
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D1800N46T
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Infineon Technologies
1800 A, 4600 V, SILICON, RECTIFIER DIODE
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PTMA180402EL
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Infineon Technologies
1800 MHz - 2000 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIE
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PTMA180402FL
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Infineon Technologies
1800 MHz - 2000 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIE
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PTMA180402M
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Infineon Technologies
1800 MHz - 2000 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIE
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