Phototransistor Chip Silicon NPN Transistor 800nm 2-Pin T-1 3/4

The actual product may differ from image shown

Product Information

Polarity	NPN
Collector Current (DC)	0.05(A)
Emitter-Collector Voltage (Max)	5(V)
Peak Wavelength	800(nm)
Collector-Emitter Voltage	30(V)
Mounting	Through Hole
Rad Hardened	No
Collector-Emitter Sat Volt (max)	0.4(V)
Operating Temperature Classification	Commercial
Power Dissipation	0.15(W)
Operating Temp Range	-20C to 75C
Package Type	T-1 3/4
Half-Intensity Angle	16(deg)
Dark Current	100(nA)
Phototransistor Type	Phototransistor
Rise Time	6000(ns)
Pin Count	2
Number of Elements	1
Fall Time	6000(ns)

Offer your acceptable price, and we may make you satisfied.Your Target Price