Phototransistor IR Chip Silicon NPN Transistor 900nm 2-Pin SMT

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Product Information

Polarity	NPN
Collector Current (DC)	0.015 A
Number of Elements	1
Peak Wavelength	900 nm
Collector Current (DC) (Max)	0.015 A
Collector-Emitter Voltage	35 V
Mounting	Surface Mount
Rad Hardened	No
Dark Current (Max)	200 nA
Operating Temperature Classification	Industrial
Power Dissipation	0.165 W
Operating Temp Range	-40C to 100C
Package Type	SMT
Light Current	16 uA
Dark Current	200 nA
Phototransistor Type	Phototransistor
Rise Time	7000 ns
Collector-Emitter Sat Volt (max)	0.15 V
Pin Count	2
Half-Intensity Angle	120 deg
Fall Time	7000 ns

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