Phototransistor IR Chip Silicon 880nm 2-Pin T-1 Bulk

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Product Information

Polarity	NPN
Emitter-Collector Voltage (Max)	5 V
Peak Wavelength	880 nm
Collector-Emitter Voltage	30 V
Mounting	Through Hole
Rad Hardened	No
Light Current	9600 uA
Lens Type	Black Transparent
Packaging	Bulk
Power Dissipation	0.1 W
Operating Temp Range	-40C to 100C
Operating Temperature Classification	Industrial
Package Type	T-1
Number of Elements	1
Dark Current	100 nA
Phototransistor Type	Phototransistor
Rise Time	5000 ns
Collector-Emitter Sat Volt (max)	0.4 V
Pin Count	2
Half-Intensity Angle	8 deg
Fall Time	5000 ns

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