Photodiodes High Speed Epitaxial .5x.5mm Active Area

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Product Information

Photodiode Material	Silicon
Peak Wavelength	850 nm
Half Intensity Angle Degrees	119 deg
Maximum Dark Current	0.3 nA
Package / Case	TO-52-S1
Light Current	10 uA
Maximum Operating Temperature	+ 100 C
Minimum Operating Temperature	- 40 C
Mounting Style	Through Hole
Packaging	Bulk
Product	PIN Photodiode
Reverse Voltage	50 V
Rise Time	0.4 ns
Sensitivity	0.52 A/W
Factory Pack Quantity	50

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