Photodiodes Si APD Enhanced for 905nm 500um Area

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Product Information

Type	Avalanche Photodiode Amplifier Hybrid
Photodiode Material	Silicon
Peak Wavelength	905 nm
Half Intensity Angle Degrees	113 deg
Maximum Dark Current	5 nA
Package / Case	TO-5
Light Current	100 nA
Maximum Operating Temperature	+ 60 C
Minimum Operating Temperature	0 C
Mounting Style	Through Hole
Packaging	Bulk
Power Dissipation	360 mW
Product	Avalanche Photodiode
Reverse Voltage	160 V
Rise Time	550 ps
Sensitivity	60 A/W
Factory Pack Quantity	20

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