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Home Semiconductors - ICs Memory 128M X 64 DDR DRAM MODULE, 0.6 ns, DMA200

128M X 64 DDR DRAM MODULE, 0.6 ns, DMA200

128M X 64 DDR DRAM MODULE, 0.6 ns, DMA200

The actual product may differ from image shown

Part No.:: HYMP512S64CP8-E3
Manufacturer:: SK hynix
Product Range:: Memory
Datasheet:: HYMP512S64CP8-E3

Product Information

Terminal Finish	NOT SPECIFIED
Terminal Pitch	0.6000 mm
Access Mode	DUAL BANK PAGE BURST
Terminal Form	NO LEAD
Operating Temperature-Max	55 Cel
Number of Words Code	128M
Supply Voltage-Nom (Vsup)	1.8 V
Temperature Grade	COMMERCIAL
Package Shape	RECTANGULAR
Status	DISCONTINUED
Lead Free	Yes
Operating Temperature-Min	0.0 Cel
Number of Words	1.34E8 words
Package Body Material	UNSPECIFIED
Number of Functions	1
Memory Density	8.59E9 deg
EU RoHS Compliant	Yes
Supply Voltage-Max (Vsup)	1.9 V
Number of Ports	1
China RoHS Compliant	Yes
Supply Voltage-Min (Vsup)	1.7 V
Organization	128M X 64
Memory Width	64
Mfr Package Description	ROHS COMPLIANT, DIMM-200
Operating Mode	SYNCHRONOUS
Number of Terminals	200
Terminal Position	DUAL
Access Time-Max (tRAC)	0.6000 ns
Package Style	MICROELECTRONIC ASSEMBLY
Memory IC Type	DDR DRAM MODULE

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