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Home Semiconductors - ICs Memory 128M X 8 DDR DRAM, 0.7 ns, PDSO66

128M X 8 DDR DRAM, 0.7 ns, PDSO66

128M X 8 DDR DRAM, 0.7 ns, PDSO66

The actual product may differ from image shown

Part No.:: HY5DU1G822LT-J
Manufacturer:: SK hynix
Product Range:: Memory
Datasheet:: HY5DU1G822LT-J

Product Information

Terminal Finish	NOT SPECIFIED
Terminal Pitch	0.6500 mm
Access Mode	FOUR BANK PAGE BURST
Terminal Form	GULL WING
Operating Temperature-Max	70 Cel
Number of Words Code	128M
Supply Voltage-Nom (Vsup)	2.5 V
Temperature Grade	COMMERCIAL
Package Shape	RECTANGULAR
Status	DISCONTINUED
Operating Temperature-Min	0.0 Cel
Number of Words	1.34E8 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Memory Density	1.07E9 deg
Supply Voltage-Max (Vsup)	2.7 V
Number of Ports	1
Supply Voltage-Min (Vsup)	2.3 V
Organization	128M X 8
Memory Width	8
Surface Mount	Yes
Mfr Package Description	0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Operating Mode	SYNCHRONOUS
Number of Terminals	66
Terminal Position	DUAL
Access Time-Max (tRAC)	0.7000 ns
Technology	CMOS
Package Style	SMALL OUTLINE, THIN PROFILE
Memory IC Type	DDR DRAM

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