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128M X 8 DDR DRAM MODULE, 20 ns, DMA203

Manufacturer:
SK hynix
Product Range:
Memory
HMT112S6AFP6C-H8

Product Information

Terminal Pitch0.6000 mm
Access ModeDUAL BANK PAGE BURST
Terminal FormNO LEAD
Operating Temperature-Max85 Cel
Number of Words Code128M
Supply Voltage-Nom (Vsup)1.5 V
Temperature GradeOTHER
Package ShapeRECTANGULAR
StatusDISCONTINUED
Operating Temperature-Min0.0 Cel
Number of Words1.34E8 words
Package Body MaterialUNSPECIFIED
Number of Functions1
Memory Density1.07E9 deg
Supply Voltage-Max (Vsup)1.58 V
Number of Ports1
Supply Voltage-Min (Vsup)1.42 V
Organization128M X 8
Memory Width8
Mfr Package DescriptionLEAD FREE, SODIMM-204
Operating ModeSYNCHRONOUS
Number of Terminals203
Terminal PositionDUAL
Access Time-Max (tRAC)20 ns
TechnologyCMOS
Package StyleMICROELECTRONIC ASSEMBLY
Memory IC TypeDDR DRAM MODULE


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