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128M X 64 DDR DRAM MODULE, 0.4 ns, DMA200

Manufacturer:
Samsung
Product Range:
Memory
M470T2863FB3-CF7

Product Information

Terminal FinishNOT SPECIFIED
Terminal Pitch0.6000 mm
Access ModeSINGLE BANK PAGE BURST
Terminal FormNO LEAD
Operating Temperature-Max85 Cel
Number of Words Code128M
Supply Voltage-Nom (Vsup)1.8 V
Temperature GradeOTHER
Package ShapeRECTANGULAR
StatusDISCONTINUED
Lead FreeYes
Operating Temperature-Min0.0 Cel
Number of Words1.34E8 words
Package Body MaterialUNSPECIFIED
Number of Functions1
Memory Density8.59E9 deg
EU RoHS CompliantYes
Supply Voltage-Max (Vsup)1.9 V
Number of Ports1
Supply Voltage-Min (Vsup)1.7 V
Organization128M X 64
Memory Width64
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
Operating ModeSYNCHRONOUS
Number of Terminals200
Terminal PositionDUAL
Access Time-Max (tRAC)0.4000 ns
Package StyleMICROELECTRONIC ASSEMBLY
Memory IC TypeDDR DRAM MODULE


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