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128M X 16 FLASH 1.8V PROM, 76 ns, PBGA63

Manufacturer:
Samsung
Product Range:
Memory
KFM2G16Q2M-DEB60

Product Information

Terminal FinishTIN SILVER COPPER
Terminal Pitch0.8000 mm
Terminal FormBALL
Operating Temperature-Max85 Cel
Number of Words Code128M
Supply Voltage-Nom (Vsup)1.8 V
Temperature GradeCOMMERCIAL EXTENDED
Package ShapeRECTANGULAR
StatusDISCONTINUED
Lead FreeYes
Operating Temperature-Min-30 Cel
Number of Words1.28E8 words
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Access Time-Max (tACC)76 ns
Memory Density2.05E9 deg
EU RoHS CompliantYes
Supply Voltage-Max (Vsup)1.95 V
China RoHS CompliantYes
Supply Voltage-Min (Vsup)1.7 V
Organization128M X 16
Memory Width16
Surface MountYes
Parallel/SerialPARALLEL
Mfr Package Description10 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
Operating ModeSYNCHRONOUS
Number of Terminals63
Terminal PositionBOTTOM
TechnologyCMOS
Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Memory IC TypeFLASH 1.8V PROM


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