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Home Semiconductors - ICs Memory 128M X 8 DDR DRAM, 0.6 ns, PBGA68

128M X 8 DDR DRAM, 0.6 ns, PBGA68

128M X 8 DDR DRAM, 0.6 ns, PBGA68

The actual product may differ from image shown

Part No.:: K4T1G084QM-ZCCC0
Manufacturer:: Samsung
Product Range:: Memory
Datasheet:: K4T1G084QM-ZCCC0

Product Information

Terminal Finish	TIN SILVER COPPER
Access Mode	MULTI BANK PAGE BURST
Terminal Form	BALL
Operating Temperature-Max	95 Cel
Number of Words Code	128M
Supply Voltage-Nom (Vsup)	1.8 V
Temperature Grade	OTHER
Package Shape	RECTANGULAR
Status	ACTIVE
Lead Free	Yes
Operating Temperature-Min	0.0 Cel
Number of Words	1.34E8 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Memory Density	1.07E9 deg
EU RoHS Compliant	Yes
Supply Voltage-Max (Vsup)	1.9 V
Number of Ports	1
China RoHS Compliant	Yes
Supply Voltage-Min (Vsup)	1.7 V
Organization	128M X 8
Memory Width	8
Surface Mount	Yes
Mfr Package Description	LEAD FREE, FBGA-68
Operating Mode	SYNCHRONOUS
Number of Terminals	68
Terminal Position	BOTTOM
Access Time-Max (tRAC)	0.6000 ns
Package Style	GRID ARRAY
Memory IC Type	DDR DRAM

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