Your cart is empty

128M X 8 DDR DRAM, 0.4 ns, PBGA60

Manufacturer:
Samsung
Product Range:
Memory
K4T1G084QF-BCE70

Product Information

Terminal FinishNOT SPECIFIED
Terminal Pitch0.8000 mm
Access ModeMULTI BANK PAGE BURST
Terminal FormBALL
Operating Temperature-Max85 Cel
Number of Words Code128M
Supply Voltage-Nom (Vsup)1.8 V
Temperature GradeOTHER
Package ShapeRECTANGULAR
StatusEOL/LIFEBUY
Lead FreeYes
Operating Temperature-Min0.0 Cel
Number of Words1.34E8 words
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Memory Density1.07E9 deg
EU RoHS CompliantYes
Supply Voltage-Max (Vsup)1.9 V
Number of Ports1
Supply Voltage-Min (Vsup)1.7 V
Organization128M X 8
Memory Width8
Surface MountYes
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, FBGA-60
Operating ModeSYNCHRONOUS
Number of Terminals60
Terminal PositionBOTTOM
Access Time-Max (tRAC)0.4000 ns
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Memory IC TypeDDR DRAM


Call for Availability
Price for:  EachMinimum:  1

Target Price

Offer your acceptable price, and we may make you satisfied.Your Target Price

Technical Support

Technical Support

Customer Reviews

Write Review

Customer Q&A Exchange

Ask A Question