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128M X 16 DDR DRAM, 0.3 ns, PBGA96

Manufacturer:
Samsung
Product Range:
Memory
K4B2G1646C-HCF80

Product Information

Terminal FinishNOT SPECIFIED
Terminal Pitch0.8000 mm
Access ModeMULTI BANK PAGE BURST
Terminal FormBALL
Operating Temperature-Max85 Cel
Number of Words Code128M
Supply Voltage-Nom (Vsup)1.5 V
Temperature GradeOTHER
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Operating Temperature-Min0.0 Cel
Number of Words1.34E8 words
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Memory Density2.15E9 deg
EU RoHS CompliantYes
Supply Voltage-Max (Vsup)1.58 V
Number of Ports1
Supply Voltage-Min (Vsup)1.42 V
Organization128M X 16
Memory Width16
Surface MountYes
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Operating ModeSYNCHRONOUS
Number of Terminals96
Terminal PositionBOTTOM
Access Time-Max (tRAC)0.3000 ns
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Memory IC TypeDDR DRAM


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