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64M X 8 DDR DRAM, 0.5 ns, PBGA60

Manufacturer:
Nanya
Product Range:
Memory
NT5TU64M8AB-37BI

Product Information

Terminal Pitch0.8000 mm
Access ModeFOUR BANK PAGE BURST
Terminal FormBALL
Operating Temperature-Max85 Cel
Number of Words Code64M
Supply Voltage-Nom (Vsup)1.8 V
Temperature GradeINDUSTRIAL
Package ShapeRECTANGULAR
StatusDISCONTINUED
Operating Temperature-Min-40 Cel
Number of Words6.71E7 words
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Memory Density5.37E8 deg
Supply Voltage-Max (Vsup)1.9 V
Number of Ports1
Supply Voltage-Min (Vsup)1.7 V
Organization64M X 8
Memory Width8
Surface MountYes
Mfr Package Description0.80 MM PITCH, BGA-60
Operating ModeSYNCHRONOUS
Number of Terminals60
Terminal PositionBOTTOM
Access Time-Max (tRAC)0.5000 ns
TechnologyCMOS
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Memory IC TypeDDR DRAM


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