Your cart is empty

512M X 4 DDR DRAM, 0.45 ns, PBGA63

Part No.:
NT5TU512T4DY-3C
Manufacturer:
Nanya
Product Range:
Memory
NT5TU512T4DY-3C

Product Information

Terminal Pitch0.8000 mm
Terminal FormBALL
Number of Words Code512M
Organization512M X 4
Supply Voltage-Nom (Vsup)1.8 V
Package ShapeRECTANGULAR
StatusACTIVE-UNCONFIRMED
Number of Words5.37E8 words
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Memory Density2.15E9 deg
Supply Voltage-Max (Vsup)1.9 V
Number of Ports1
Supply Voltage-Min (Vsup)1.7 V
Access ModeMULTI BANK PAGE BURST
Memory Width4
Surface MountYes
Mfr Package DescriptionBGA-63
Operating ModeSYNCHRONOUS
Number of Terminals63
Terminal PositionBOTTOM
Access Time-Max (tRAC)0.4500 ns
TechnologyCMOS
Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH
Memory IC TypeDDR DRAM


Call for Availability
Price for:  EachMinimum:  1

Target Price

Offer your acceptable price, and we may make you satisfied.Your Target Price

Technical Support

Technical Support

Customer Reviews

Write Review

Customer Q&A Exchange

Ask A Question