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128M X 4 DDR DRAM, 0.4 ns, PBGA60

Manufacturer:
Micron Technology
Product Range:
Memory

Product Information

Terminal FinishTIN SILVER COPPER
Terminal Pitch0.8000 mm
Access ModeFOUR BANK PAGE BURST
Terminal FormBALL
Operating Temperature-Max85 Cel
Number of Words Code128M
Supply Voltage-Nom (Vsup)1.8 V
Temperature GradeOTHER
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Operating Temperature-Min0.0 Cel
Number of Words1.34E8 words
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Memory Density5.37E8 deg
EU RoHS CompliantYes
Supply Voltage-Max (Vsup)1.9 V
Number of Ports1
Supply Voltage-Min (Vsup)1.7 V
Organization128M X 4
Memory Width4
Surface MountYes
Mfr Package Description12 X 10 MM, ROHS COMPLIANT, FBGA-60
Operating ModeSYNCHRONOUS
Number of Terminals60
Terminal PositionBOTTOM
Access Time-Max (tRAC)0.4000 ns
TechnologyCMOS
Package StyleGRID ARRAY
Memory IC TypeDDR DRAM


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