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Home Semiconductors - ICs Memory 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54

4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54

4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54

The actual product may differ from image shown

Part No.:: M12L64164A-6TA
Manufacturer:: ESMT
Product Range:: Memory
Datasheet:: M12L64164A-6TA

Product Information

Terminal Pitch	0.8000 mm
Access Mode	FOUR BANK PAGE BURST
Terminal Form	GULL WING
Operating Temperature-Max	85 Cel
Number of Words Code	4M
Supply Voltage-Nom (Vsup)	3.3 V
Temperature Grade	OTHER
Package Shape	RECTANGULAR
Status	ACTIVE
Operating Temperature-Min	-25 Cel
Number of Words	4.19E6 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Memory Density	6.71E7 deg
Supply Voltage-Max (Vsup)	3.6 V
Number of Ports	1
Supply Voltage-Min (Vsup)	3 V
Organization	4M X 16
Memory Width	16
Surface Mount	Yes
Mfr Package Description	0.400 X 0.875 INCH, TSOP2-54
Operating Mode	SYNCHRONOUS
Number of Terminals	54
Terminal Position	DUAL
Access Time-Max (tRAC)	5.5 ns
Package Style	SMALL OUTLINE, THIN PROFILE
Memory IC Type	SYNCHRONOUS DRAM

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