IRF3808

The actual product may differ from image shown

Product Information

HEXFET Power MOSFETs Discrete N-Channel
Package	TO-220AB
Circuit	Discrete
VBRDSS (V)	75
VGs Max (V)	20
RDS(on) Max 4.5V (mOhms)
RDS(on) Max 10V (mOhms)	7
ID @ TC = 25C (A)	140
ID @ TC = 100C (A)	97
ID @ TA = 25C (A)
ID @ TA = 70C (A)
Qg Typ (nC)	150
Qgd Typ (nC)	50
Rth(JC) (K/W)	0.45
Power Dissipation @ TC = 25C (W)	330
Power Dissipation @ TA = 25C (W)
Package Class Can	Thru-Hole

Offer your acceptable price, and we may make you satisfied.Your Target Price