IRF630N

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Product Information

HEXFET Power MOSFETs Discrete N-Channel
Package	TO-220AB
Circuit	Discrete
VBRDSS (V)	200
VGs Max (V)	20
RDS(on) Max 4.5V (mOhms)
RDS(on) Max 10V (mOhms)	300
ID @ TC = 25C (A)	9.5
ID @ TC = 100C (A)	6.8
ID @ TA = 25C (A)
ID @ TA = 70C (A)
Qg Typ (nC)	23.3
Qgd Typ (nC)	11.3
Rth(JC) (K/W)	1.83
Power Dissipation @ TC = 25C (W)	82
Power Dissipation @ TA = 25C (W)
Package Class Can	Thru-Hole

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