IRF640NS

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Product Information

HEXFET Power MOSFETs Discrete N-Channel
Package	D2-Pak
Circuit	Discrete
VBRDSS (V)	200
VGs Max (V)	20
RDS(on) Max 4.5V (mOhms)
RDS(on) Max 10V (mOhms)	150
ID @ TC = 25C (A)	18
ID @ TC = 100C (A)	13
ID @ TA = 25C (A)
ID @ TA = 70C (A)
Qg Typ (nC)	44.7
Qgd Typ (nC)	22
Rth(JC) (K/W)	1
Power Dissipation @ TC = 25C (W)	150
Power Dissipation @ TA = 25C (W)
Package Class Can	Surface Mount with Leads

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