IRF5805

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Product Information

HEXFET Power MOSFETs Discrete P-Channel
Package	TSOP-6 (Micro 6)
Circuit	Discrete
VBRDSS (V)	-30
VGs Max (V)	20
RDS(on) 1.8V (mOhms)
RDS(on) Max 2.5V (mOhms)
RDS(on) Max 2.7V (mOhms)
RDS(on) Max 4.5V (mOhms)	165.0
RDS(on) Max 10V (mOhms)	98.0
ID @ TC = 25C (A)
ID @ TC = 100C (A)
ID @ TA = 25C (A)	-3.8
ID @ TA = 70C (A)	-3
Qg Typ (nC)	11.0
Qgd Typ (nC)	1.5
Rth(JC) (K/W)	62.5 (JA)
Power Dissipation @ TC = 25C (W)
Power Dissipation @ TA = 25C (W)	2.00

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