IRF8910

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Product Information

HEXFET Power MOSFETs Dual N-Channel
Package	SO-8
Circuit	DUAL N
\|BVDSS\|	20
VGs Max (V)	20
RDS(on) 2.7V N-Channnel (mOhms)
RDS(on) 4.5V N-Channnel (mOhms)	18.3
RDS(on) 10V N-Channnel (mOhms)	13.4
ID @ TA = 25C N-Channel (A)	10
ID @ TA = 70C N-Channel (A)	8.3
Qg Typ N-Channel (nC)	7.4
Qgd Typ N-Channel (nC)	2.5
Rth(JA) (K/W)	62.5
Power Dissipation (W)	2.0

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