IRF7338

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Product Information

HEXFET Power MOSFETs Dual N and P-Channel
Package	SO-8
Circuit	1 N / 1 P
\|BVDSS\|	12
VGs Max (V)	8
RDS(on) 2.7V N-Channnel (mOhms)	60.0
RDS(on) 2.7V P-Channnel (mOhms)	200.0
RDS(on) 4.5V N-Channnel (mOhms)	34.0
RDS(on) 4.5V P-Channnel (mOhms)	150
RDS(on) 10V N-Channnel (mOhms)
RDS(on) 10V P-Channnel (mOhms)
ID @ TA = 25C N-Channel (A)	6.3
ID @ TA = 25C P-Channel (A)	-3.0
ID @ TA = 70C N-Channel (A)	5.2
ID @ TA = 70C P-Channel (A)	-2.5
Qg Typ N-Channel (nC)	5.7
Qg Typ P-Channel (nC)	4.4
Qgd Typ N-Channel (nC)	2.6
Qgd Typ P-Channel (nC)	1.1
Rth(JA) (K/W)	62.5
Power Dissipation (W)	2.0

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