IRF7350

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Product Information

HEXFET Power MOSFETs Dual N and P-Channel
Package	SO-8
Circuit	1 N / 1 P
\|BVDSS\|	100
VGs Max (V)	20
RDS(on) 2.7V N-Channnel (mOhms)
RDS(on) 2.7V P-Channnel (mOhms)
RDS(on) 4.5V N-Channnel (mOhms)
RDS(on) 4.5V P-Channnel (mOhms)
RDS(on) 10V N-Channnel (mOhms)	210.0
RDS(on) 10V P-Channnel (mOhms)	480.0
ID @ TA = 25C N-Channel (A)	2.1
ID @ TA = 25C P-Channel (A)	-1.5
ID @ TA = 70C N-Channel (A)	1.3
ID @ TA = 70C P-Channel (A)	-1
Qg Typ N-Channel (nC)	19.0
Qg Typ P-Channel (nC)	21.0
Qgd Typ N-Channel (nC)	8.8
Qgd Typ P-Channel (nC)	10.0
Rth(JA) (K/W)	62.5
Power Dissipation (W)	2.0

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