IRF6216

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Product Information

HEXFET Power MOSFETs Discrete P-Channel
Package	SO-8
Circuit	Discrete
VBRDSS (V)	-150
VGs Max (V)	20
RDS(on) 1.8V (mOhms)
RDS(on) Max 2.5V (mOhms)
RDS(on) Max 2.7V (mOhms)
RDS(on) Max 4.5V (mOhms)
RDS(on) Max 10V (mOhms)	240.0
ID @ TC = 25C (A)
ID @ TC = 100C (A)
ID @ TA = 25C (A)	-2.2
ID @ TA = 70C (A)	-1.9
Qg Typ (nC)	33.0
Qgd Typ (nC)	15.0
Rth(JC) (K/W)	20
Power Dissipation @ TC = 25C (W)
Power Dissipation @ TA = 25C (W)	2.50

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