IRF7822

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Product Information

HEXFET Power MOSFETs Discrete N-Channel
Package	SO-8
Circuit	Discrete
VBRDSS (V)	30
VGs Max (V)	12
RDS(on) Max 4.5V (mOhms)	6.5
RDS(on) Max 10V (mOhms)
ID @ TC = 25C (A)
ID @ TC = 100C (A)
ID @ TA = 25C (A)	18
ID @ TA = 70C (A)	12.5
Qg Typ (nC)	44
Qgd Typ (nC)	9
Rth(JC) (K/W)	40 (JA)
Power Dissipation @ TC = 25C (W)
Power Dissipation @ TA = 25C (W)	3.1
Package Class Can	Surface Mount with Leads

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