IRF1902

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Product Information

HEXFET Power MOSFETs Discrete N-Channel
Package	SO-8
Circuit	Discrete
VBRDSS (V)	20
VGs Max (V)	12
RDS(on) Max 4.5V (mOhms)	85
RDS(on) Max 10V (mOhms)
ID @ TC = 25C (A)
ID @ TC = 100C (A)
ID @ TA = 25C (A)	4.2
ID @ TA = 70C (A)	3.4
Qg Typ (nC)	5
Qgd Typ (nC)	1.8
Rth(JC) (K/W)	50 (JA)
Power Dissipation @ TC = 25C (W)
Power Dissipation @ TA = 25C (W)	2.5
Package Class Can	Surface Mount with Leads

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