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1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part No.:
2SK2013-O
Manufacturer:
Toshiba
Product Range:
Transistors (BJT)
2SK2013-O

Product Information

StatusACTIVE
Channel TypeN-CHANNEL
Terminal FinishNOT SPECIFIED
Package Body MaterialPLASTIC/EPOXY
Mfr Package DescriptionLEAD FREE, 2-10R1B, SC-67, 3 PIN
Terminal FormTHROUGH-HOLE
Operating ModeENHANCEMENT
Package StyleFLANGE MOUNT
Transistor ApplicationAMPLIFIER
Drain Current-Max (ID)1 A
Case ConnectionISOLATED
Transistor Element MaterialSILICON
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Terminal PositionSINGLE
Transistor TypeGENERAL PURPOSE POWER
Package ShapeRECTANGULAR
ConfigurationSINGLE
Number of Terminals3
DS Breakdown Voltage-Min180 V
Number of Elements1


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