1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Status	ACTIVE
Terminal Finish	TIN LEAD
Package Body Material	PLASTIC/EPOXY
Channel Type	N-CHANNEL
Terminal Form	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Package Style	FLANGE MOUNT
Transistor Application	AMPLIFIER
Drain Current-Max (ID)	1 A
Case Connection	ISOLATED
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Terminals	3
DS Breakdown Voltage-Min	180 V
Number of Elements	1

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