0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92

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Product Information

Status	DISCONTINUED
Channel Type	N-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	ROHS COMPLIANT PACKAGE-3
Pulsed Drain Current-Max (IDM)	1 A
Terminal Form	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Package Style	CYLINDRICAL
Avalanche Energy Rating (Eas)	90 mJ
Transistor Application	SWITCHING
Drain Current-Max (ID)	0.3000 A
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	BOTTOM
Transistor Type	GENERAL PURPOSE POWER
Package Shape	ROUND
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	21.6 ohm
Number of Terminals	3
DS Breakdown Voltage-Min	800 V
Number of Elements	1

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