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0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92

Part No.:
TSM1N80SCTA3
Manufacturer:
Taiwan Semiconductor
Product Range:
Transistors (BJT)
TSM1N80SCTA3

Product Information

StatusDISCONTINUED
Channel TypeN-CHANNEL
Package Body MaterialPLASTIC/EPOXY
Mfr Package DescriptionROHS COMPLIANT PACKAGE-3
Pulsed Drain Current-Max (IDM)1 A
Terminal FormTHROUGH-HOLE
Operating ModeENHANCEMENT
Package StyleCYLINDRICAL
Avalanche Energy Rating (Eas)90 mJ
Transistor ApplicationSWITCHING
Drain Current-Max (ID)0.3000 A
Transistor Element MaterialSILICON
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Terminal PositionBOTTOM
Transistor TypeGENERAL PURPOSE POWER
Package ShapeROUND
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max21.6 ohm
Number of Terminals3
DS Breakdown Voltage-Min800 V
Number of Elements1


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