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0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
TSM1N80CWRP
Manufacturer:
Taiwan Semiconductor
Product Range:
Transistors (BJT)
TSM1N80CWRP

Product Information

Terminal FormGULL WING
Avalanche Energy Rating (Eas)90 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)0.3000 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max21.6 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)1 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min800 V
Transistor ApplicationSWITCHING
Surface MountYes
Mfr Package DescriptionROHS COMPLIANT PACKAGE-4
Operating ModeENHANCEMENT
Number of Terminals4
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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